Strong exciton energy blue shift in annealed SirSiO single 2 quantum wells

A theoretical study is presented on how the annealing-induced interfacial transition region changes the confined ground state exciton in SirSiO2 single quantum wells QWs.. The interface thickness and the mean well width confinement depend on the time and temperature of annealing, as well as on the diffusion coefficient of oxygen in silicon. It is shown that an annealing-related interface width increase of a few A° ngstro¨ms can strongly blue shift hundreds of milli-electron volts.the confined ground state exciton energy in SirSiO2 single quantum wells. The results allow to suggest that annealing processes can be used to tune from red to blue.the light emission in SirSiO2 single quantum wells. q2000 Elsevier Science B.V. All rights reserved