Title of article
Fermi level-dependent defect formation at Cu In,Ga/Se interfaces
Author/Authors
A. Klein، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
508
To page
512
Abstract
A removal of Cu from the surface is observed when the Fermi level moves upwards in the bandgap of Cu In,Ga.Se2
semiconductors during contact formation. A model based on a comparison of band edge energies and electrochemical redox
energies is proposed, which qualitatively explains the observations and might be used as a simple rule for predicting similar
defect formation processes. q2000 Elsevier Science B.V. All rights reserved.
Keywords
Fermi level , Cu In , Ga.Se2 semiconductors , Defect formation
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996563
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