On the nature of transition layer and heat tolerance of TiB rGaAs-based contacts

We present the results of structural, analytical, optical and electrophysical investigations of TiB –GaAs contacts. They x were obtained by magnetron sputtering from pressed powder targets and were studied before and after rapid 60 s.thermal annealing RTA.in a hydrogen atmosphere at Ts4008C, 6008C and 8008C. It was shown that a transition layer is formed by Ga B As phase during contact formation. The decay of this phase during thermal annealing causes a parameter x 1yx degradation in the surface-barrier diodes. q2000 Elsevier Science B.V. All rights reserved.