Title of article
Chemical passivation of Si 111/ capped by a thin GaSe layer
Author/Authors
R. Rudolph، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
3
From page
122
To page
124
Abstract
An ultrathin layer of GaSe was grown on a hydrogen-terminated Si 111.substrate by molecular beam epitaxy. Substrate
and epilayer were investigated by photoemission XPS and UPS.and electron diffraction LEED. immediately after sample
preparation and after storage of 30 days in air. The tendency to surface oxidation is strongly reduced for the GaSe-covered
sample compared to a hydrogen-terminated sample. q2000 Elsevier Science B.V. All rights reserved
Keywords
Si 111. , Surface passivation , Photoemission , surface oxidation , van der Waals-surfaces
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996580
Link To Document