Title of article
Rashba effect resonant tunneling spin filters
Author/Authors
D.Z.-Y.، Ting, نويسنده , , X.، Cartoixa, نويسنده , , D.H.، Chow, نويسنده , , J.S.، Moon, نويسنده , , D.L.، Smith, نويسنده , , T.C.، McGill, نويسنده , , J.N.، Schulman, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-740
From page
741
To page
0
Abstract
We propose an InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) as a spin filter. The device exploits the Rashba effect to achieve spin polarization under zero magnetic field using nonmagnetic III-V semiconductor heterostructures. We discuss the basic principles of the interband tunneling spin filter, and present modeling results that demonstrate its advantage. We also propose an implementation procedure for realizing device structure.
Keywords
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Journal title
Proceedings of the IEEE
Serial Year
2003
Journal title
Proceedings of the IEEE
Record number
99660
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