Title of article
Photo-assisted MOCVD of copper using Cu(hfa)(COD) as precursor
Author/Authors
S. Vidal، نويسنده , , F. Maury*، نويسنده , , A. Gleizes، نويسنده , , C. Mijoule، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
57
To page
60
Abstract
Cu thin ®lms were deposited in the temperature range 100±1808C using the title precursor by photo-MOCVD. The
ultraviolet (UV) photons facilitate a clean removal of the ligands. Consequently, the growth rate is slightly increased under
irradiation and the morphology and the ®lm resistivity is improved. # 2000 Elsevier Science B.V. All rights reserved
Keywords
Cu(I) precursor , Theoretical UV spectrum , Cu ®lms , Photo-CVD
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996607
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