• Title of article

    Quantum size effect in low energy electron diffraction of thin ®lms

  • Author/Authors

    M.S. Altman، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    6
  • From page
    82
  • To page
    87
  • Abstract
    Low energy electron microscopy (LEEM) is used to study the quantum size effect (QSE) in electron re¯ectivity from thin ®lms. Strong QSE interference peaks are seen below 20 eV for Cu and Ag ®lms on the W(1 1 0) surface and Sb ®lms on the Mo(0 0 1) surface. Simple inspection of QSE interference peaks reveals that all three metals grow atomic layer-by-atomic layer. Layer-speci®c I(V) spectra obtained with LEEM permit structural analysis by full dynamical multiple scattering LEED calculations for a layer-by-layer view of thin ®lm structure. # 2001 Elsevier Science B.V. All rights reserved.
  • Keywords
    Low energy electron diffraction , Low energy electron microscopy , Thin ®lm structure
  • Journal title
    Applied Surface Science
  • Serial Year
    2001
  • Journal title
    Applied Surface Science
  • Record number

    996688