Growth of InN ®lms on (1 1 1)GaAs substrates by reactive magnetron sputtering

Indium nitride (InN) ®lms were grown on (1 1 1)GaAs substrates by reactive magnetron sputtering using an indium target. It was found that the crystal quality of InN ®lms depends strongly on the substrate temperature and sputtering gas pressure, and highly c-axis preferred wurtzite InN ®lms can be obtained at growth temperature as low as 1008C. Based on these results, the growth mechanism of InN ®lms in the reactive magnetron sputtering was discussed. # 2001 Elsevier Science B.V. All rights reserved.