Electrical and optical properties of InN ®lms prepared by reactive sputtering

Indium nitride thin ®lms were prepared by the reactive magnetron sputtering method. The indium target was sputtered by pure nitrogen gas. The effects of sputtering pressure (P) on the structural, optical and electrical properties of the ®lms were investigated. With increasing P, the deposition rate decreased, and the ®lm structure changed from crystalline phase with a hexagonal wurtzite structure to amorphous one. The energy bandgaps in crystalline ®lms are around 1.9 eV, whereas optical bandgaps in amorphous ®lms are larger than this value. The electrical conductivity, Hall mobility and carrier concentration of the ®lms depend on P and they take minima at P 4Pa # 2001 Elsevier Science B.V. All rights reserved