Development of PZT sputtering method for mass-production

Ferroelectric thin ®lms have been widely expected for nonvolatile ferroelectric random access memory (FeRAM) application. Production process of depositing Pb(Zr,Ti)O3 (PZT) thin ®lms has been developed by using RF-magnetron sputtering method. It is very important to study stability of Pb content in the PZT ®lms, uniformity of ®lm thickness on large (8 in.) substrate and maintenance periodicity of the sputtering chamber (coping with particles) for the production. The stability for 1000 wafer deposition and the thickness uniformity of 5% were realized. Improving the sputtering equipment, the shield life until particlebreak- out became long. # 2001 Elsevier Science B.V. All rights reserved