On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature

Hydrogenated amorphous carbon ®lms have been deposited on tungsten and quartz substrates at room temperature by photolytic dissociation of CH2I2. An Ar‡ cw laser operating at 350 nm was used as the excitation source. The laser beam was focused parallel to the substrate surface. The deposition process was investigated as a function of laser power and total pressure. The carbon ®lms were analysed by micro-Raman spectroscopy, IR spectroscopy, atomic force microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The growth mechanism is discussed from results and analysis. # 2001 Elsevier Science B.V. All rights reserved.