The improvement of the SiO2/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition system

The improvement of electrophysical parameters of an SiO2/InAs interface were observed during a DC (direct current) sputter deposition of an ITO (indium tin oxide) ®lm. We observed a reduced interface-state density for the ITO/SiO2/InAs structure from 2:5 1012 to 5:7 1011 cmÿ2 eVÿ1 with an electron-stimulated modi®cation of a semiconductor±dielectric interface. The built-in positive charge density also decreased from 2:7 1012 to 6:7 1011 cmÿ2. Experiments were conducted to verify that the main cause of the improvement was due to electron penetration through the SiO2 ®lm into the bulk of the semiconductor crystal lattice. By using a DC sputter deposition for the ITO ®lm, we have presented a new method for the modi®cation of a semiconductor±dielectric interface of a ITO/SiO2/InAs structure. # 2001 Elsevier Science B.V. All rights reserved.