Title of article
Photoluminescence emission (1.3–1.4 μm) from quantum dots heterostructures based on GaAs
Author/Authors
V.A Egorov، نويسنده , , N.K Polyakov، نويسنده , , A.A Tonkikh، نويسنده , , V.N Petrov، نويسنده , , G.E Cirlin، نويسنده , , B.V Volovik، نويسنده , , A.E Zhukov، نويسنده , , Yu.G Musikhin، نويسنده , , N.A Cherkashin، نويسنده , , V.M Ustinov، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
243
To page
248
Abstract
Optical and structural properties of heterostructures with InAs quantum dots overgrown by InGaAs quantum well and multilayer structures with InAs/GaAs quantum dots are investigated. Different growth techniques are used for the formation of an In-content region. It is shown that under optimal growth conditions, the 1.3 μm emission could be achieved for both type of structures. For multilayer structures, 1.4 μm emitting is achieved. Different scenarios of quantum dots multilayer structures evaluation are discussed in a frame of elastic theory to explain differences in the properties of the grown multilayer structures.
Keywords
Quantum dot , Molecular beam epitaxy , Photoluminescence
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997040
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