Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Cubic-silicon carbide (3C-SiC) epitaxial films were grown on Si substrates by the triode plasma chemical vapor deposition (CVD) method using monomethylsilane (MMS) diluted with hydrogen as a source gas. Under negative grid bias condition, the single crystal films with high quality were grown at temperatures higher than 900°C. The growth rate by triode plasma CVD appreciably increased at temperatures lower than 1100°C, compared to that grown by low-pressure thermal CVD (LPCVD). Activation energy of the growth rate decreased about 30 kcal mol−1 by using the triode plasma CVD method.