Growth of CdTe islands on ZnTe by hot-wall epitaxy

We investigated the growth of self-organized CdTe islands on ZnTe(0 0 1) using hot-wall epitaxy (HWE), and recognized the formation of CdTe islands for the first time by HWE. ZnTe(0 0 1) layers used for islands formation were grown on CdTe (4 nm thick) buffer layer deposited on GaAa(0 0 1) By HWE. The precise control of CdTe layer was performed by alternate deposition of Cd and Te in auto regulated manner (ARM). The atomic force microscope (AFM) measurements of the grown surface revealed the formation of islands with the size of about 25 nm in base diameter, 1 nm in height and with the density of 1011 cm−2.