Title of article
Positron study of defects in a-SixC1−xfilms produced by ion beam deposition method
Author/Authors
M Reinoso، نويسنده , , R.S. Brusa، نويسنده , , A Somoza، نويسنده , , W Deng، نويسنده , , G.P. Karwasz، نويسنده , , A Zecca، نويسنده , , E.B. Halac، نويسنده , , H Huck، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
96
To page
102
Abstract
Amorphous SixC1−x (a-SixC1−x) films with x ranging from 0 to 0.4 have been produced using a high energy ion beam deposition method. The resulting films have been characterized by Raman annihilation spectroscopy and positron annihilation spectroscopy (PAS). Hardness and wear resistance have also been measured. It has been shown that the open volume defects and their distribution through the films have an important role in determining the mechanical behavior of the as-deposited and thermal treated films.
Keywords
Open volume defects , Amorphous silicon carbon films , Slow positrons , Mechanical behavior
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997142
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