• Title of article

    Manufacturing of porous silicon; porosity and thickness dependence on electrolyte composition

  • Author/Authors

    K. Kord?s، نويسنده , , J. Remes، نويسنده , , S. Beke، نويسنده , , T. Hu، نويسنده , , S. Lepp?vuori، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    4
  • From page
    190
  • To page
    193
  • Abstract
    Porous silicon (PS) layers were manufactured by the anodization of silicon (Si) wafers in hydrofluoric acid/ethanol/water (HF/EtOH/H2O) and hydrofluoric acid/surfactant/water (HF/Decon/H2O) electrolytes. Physical parameters such as thickness (d) and porosity (p) of the formed PS were determined as the function of concentrations of HF, EtOH, Decon ([HF], [EtOH] and [Decon], respectively). It was found that higher [HF] decreases, while higher [EtOH] increases the porosity and helps to produce both uniform anodization and PS layers. The thickness of the formed PS films were measured by profilometry and prooved to be proportional to [HF] and inversly proportional to [EtOH].
  • Keywords
    Porous-materials preparation , Electrolysis , Semiconductors-semiconductor/electrolyte contacts
  • Journal title
    Applied Surface Science
  • Serial Year
    2001
  • Journal title
    Applied Surface Science
  • Record number

    997195