Title of article
Influence of structure development on atomic layer deposition of TiO2 thin films
Author/Authors
J. Aarik، نويسنده , , J. Karlis، نويسنده , , H. M?ndar، نويسنده , , T. Uustare and A. Kikas، نويسنده , , V. Sammelselg، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
10
From page
339
To page
348
Abstract
Microstructure of titanium dioxide (TiO2) thin films grown in the atomic layer deposition (ALD) process from titanium ethoxide (Ti(OCH2CH3)4) and water (H2O) vapor was studied. It was revealed that formation of crystalline (anatase) phase in the films at 200°C and higher substrate temperatures resulted in considerable surface roughening and increase in the growth rate. The effect most markedly contributed to the film growth at 200°C. At this temperature, the average growth rate increased 1.4 times with the increase of film thickness from about 100 to 280 nm.
Keywords
Atomic layer deposition , Crystallization , Titanium dioxide , Surface morphology , Adsorption
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997324
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