Title of article
Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers
Author/Authors
E. E. Kalinina، نويسنده , , G. Kholujanov، نويسنده , , O. I. Obolenskii and A. V. Solov’ev ، نويسنده , , A. Strel’chuk، نويسنده , , V. Kossov، نويسنده , , R. Yafaev، نويسنده , , Kovarskii، نويسنده , , A. Shchukarev، نويسنده , , S. Obyden، نويسنده , , G. Saparin، نويسنده , , P. Ivannikov، نويسنده , , A. Hallén، نويسنده , , A. Konstantinov، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
323
To page
329
Abstract
The effect of ion implantation doping (ID) with high doses of Al followed by short high-temperature annealing of n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) has been studied. The comparative investigations of the structural and electrical properties, lateral and as a function of depth, in the CVD layers before and after Al ID p+n junction formations were determined by several different methods. Structural improvement of the CVD epitaxial layers close to Al ID p+n junction positions was revealed for the first time.
Keywords
Ion implantation , p–n junctions , Defects , Silicon carbide
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997423
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