Role of the defects under porous silicon carbide formation

The resent study is concerned with the structure of porous silicon carbide (PSC) layers fabricated on 6H–SiC substrates produced by CREE Research and differ from each other by the defects presented (Type I and Type II). For Type I samples, the current density at the electrochemical etching was 20, 60, and 100 mA/cm2, whereas for Type II samples a lower current density—5, 10, and 15 mA/cm2—was used because of the presence of a large number of voids. It is shown that porous layer characteristics (pore size, porosity, layer thickness) depend on the structure of the initial substrate to a large extent.