Title of article
Oxide growth on SiC(0 0 0 1) surfaces
Author/Authors
D. Schmei?er، نويسنده , , D.R. Batchelor، نويسنده , , R.P. Mikalo، نويسنده , , P. Hoffmann، نويسنده , , A. Lloyd-Spetz، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
340
To page
345
Abstract
The oxidation of 6H SiC(0 0 0 1) surfaces is studied by high resolution photoelectron spectroscopy. We compare the oxides formed by HF dip, by room temperature treatment in ozone, and by thermal oxidation in air at 1000 °C, respectively. We find a stable intermediate layer in all investigated systems which differs from the bulk oxide that is stable up to 1200 °C. Our data suggest that the growth of the SiO2 layer proceeds via that intermediate silicate layer.
Keywords
Silicate layer , Depth profiling , SiC oxide interface , FET device , Ozone and thermal oxidation
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997478
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