Title of article
Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates
Author/Authors
A.A. Lebedev، نويسنده , , A.M. Strel’chuk، نويسنده , , D.V. Davydov، نويسنده , , N.S. Savkina، نويسنده , , A.S. Tregubova، نويسنده , , A.N. Kuznetsov، نويسنده , , V.A. Solov’ev، نويسنده , , N.K. Poletaev، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
419
To page
424
Abstract
Sublimation epitaxy in a vacuum (SEV) has been used to obtain p-3C–SiC/n-6H–SiC heteroepitaxial structures. Results of a study of epilayers (X-ray diffraction analysis, scanning electron microscopy involving secondary electrons and electron beam induced current modes) and diode structures on their base (I–V and C–V characteristics, electroluminescence spectra, DLTS) are presented. Band discontinuities are determined and a band diagram of the p-3C–SiC/n-6H–SiC heterostructure is constructed.
Keywords
Sublimation epitaxy , Band diagram , Exiton , SiC , Heteropolytype structures
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997493
Link To Document