Title of article
A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
Author/Authors
Susumu Ohki، نويسنده , , Hiroki Funato، نويسنده , , Michihiko Suhara، نويسنده , , Tsugunori Okumura ’، نويسنده , , Lars-Erik Wernersson، نويسنده , , Werner Seifert، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
288
To page
293
Abstract
A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current–voltage (I–V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and ΔEc was estimated as 200–240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K.
Keywords
GaAsP/GaAs , Triple-barrier resonant tunneling diodes , Band offset , Heterointerface , Strain barrier , Thermionic emission
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
997875
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