Title of article
Acceptor- and donor-like interfacial states at ZnSe/GaAs heterovalent interfaces
Author/Authors
Fang Lu، نويسنده , , Z.Q. Zhu، نويسنده , , K. Kimura، نويسنده , , T. Yao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
302
To page
306
Abstract
The properties of ZnSe/GaAs interface with acceptor-like or donor-like state have been studied. The electric field and potential profile at the interface with donor-like or acceptor-like state has been calculated by solving Poisson equation, and been detected by photo-voltage measurement. The photocurrent measurement shows different behaviors in these two kinds of samples.
Keywords
ZnSe , GaAs , Interface , Photocurrent , Heterovalent , Photo-voltage
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
997878
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