Title of article
Soft X-ray emission study of thermally treated Ni(film)/4H–SiC(substrate) interface
Author/Authors
A. Ohi، نويسنده , , J. Labis، نويسنده , , Y. MORIKAWA، نويسنده , , T. Fujiki، نويسنده , , M. Hirai، نويسنده , , M. Kusaka، نويسنده , , M. Iwami، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
366
To page
370
Abstract
Deposition of Ni as contact on 4H–SiC has been investigated. Ni/4H–SiC samples were annealed at temperatures of 600, 800 and 950 °C for 30 min and were non-destructively characterized by soft X-ray emission spectroscopy (SXES) using synchrotron radiation as excitation. Si L2,3 SXE showed the formation of Ni2Si for all annealing temperatures. The C K SXE indicated the formation of graphite and graphitic carbons at annealing temperatures of 950 °C and below 800 °C, respectively.
Keywords
Soft X-ray emission , Synchrotron radiation , Silicon carbide , Interfacial reaction
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
997891
Link To Document