Morphology and interfacial properties of microrelief metal–semiconductor interface

The effect of the morphology of Au/GaAs interface microrelief, prepared by chemical anisotropic etching, on current flow mechanism, electronic and recombination properties of interface has been investigated. Simulation of I–V curves and optical transmittance of light into semiconductor was made on the basis of the developed theories taking into account the barrier height distribution and the effect of scattering of light by low microrelief.