Title of article
Formation of carbon nanowires by annealing silicon carbide films deposited by magnetron sputtering
Author/Authors
An Xia، نويسنده , , Zhuang Huizhao، نويسنده , , Yang Li، نويسنده , , Xue Chengshan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
87
To page
91
Abstract
The silicon carbide films were grown on a Si(1 1 1) substrate by radio frequency (RF) magnetron sputtering at room temperature. Carbon nanowires were obtained after annealing at 1150 °C for 3 h in a H2 atmosphere. Fourier transform infrared transmission spectroscopy (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were employed to analyze the structure, composition and surface morphology of the films. The results confirmed the formation of carbon nanowires.
Keywords
Magnetron sputtering technique , Silicon carbide , Carbon nanowire , Thin films
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
997993
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