• Title of article

    Molecular dynamics simulation of ionized cluster beam deposition using the tight-binding model

  • Author/Authors

    Shin-Pon Ju، نويسنده , , Cheng-I Weng، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    21
  • From page
    224
  • To page
    244
  • Abstract
    This paper employs molecular dynamics (MD) simulation to investigate the ionized cluster beam deposition (ICBD) process, and focuses particularly upon the cluster/substrate interaction, including void formation, impact energy transformation, atom motion trajectory, surface reconstruction, and atomic structure variation during the impact process. The many-body, tight-binding potential method is used to simulate the interatomic force which exists between the atoms. The results indicate that atomic motion caused by the impact of the cluster occurs in the closed-packed directions, both for atoms on the substrate surface, and for those within the substrate. Furthermore, it is found that the diffusion of kinetic energy, and transformation of the impact force also occurs in this direction. Finally, it is observed that the structure of the substrate in the impact region tends to become a disordered (liquid) phase during the initial impact period, but that it then recovers to a crystalline structure at steady state conditions.
  • Keywords
    Ionized cluster beam deposition , Tight-binding potential , molecular dynamics
  • Journal title
    Applied Surface Science
  • Serial Year
    2002
  • Journal title
    Applied Surface Science
  • Record number

    998010