Title of article
Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams
Author/Authors
Z.Q. Chen، نويسنده , , Akira Uedono، نويسنده , , Atsushi Ogura، نويسنده , , Haruhiko Ono، نويسنده , , Ryoichi Suzuki، نويسنده , , Toshiyuki Ohdaira، نويسنده , , Tomohisa Mikado، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
112
To page
115
Abstract
Oxygen-related defects in Separation-by-IMplanted OXygen (SIMOX) wafers and their annealing behavior are studied by variable-energy positron annihilation spectroscopy. After implantation of 180 keV oxygen into Si substrates at a dose of 4×1017 cm−2, two kinds of vacancy-type defects are observed by positrons, i.e. vacancy clusters and vacancy-oxygen complexes. Their sizes are larger than and close to V6, respectively. According to the annealing behavior of the vacancy cluster, there are three annealing stages. A detailed discussion of the annealing behavior of the two defects is presented.
Keywords
SIMOX , Positron beam , Vacancy-oxygen complex
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
998037
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