Ti–N, Ti–C–N, Ti–Si–N coatings obtained by APCVD at 650–800 °C

Ti–N, Ti–C–N, and Ti–Si–N coating systems obtained by atmospheric pressure chemical vapor deposition (APCVD) with TiCl4, C2H2 or SiCl4, and NH3 as reactants have been examined at 650–800 °C in this study. Low pressure CVD (LPCVD) has been applied for deposition by the TiCl4–NH3 system instead of APCVD. The C2H2 addition to Ti–N did not change the growth rate, coating composition, crystal structure, and hardness, but only changed its microstructure. The SiCl4 addition showed a strong effect on the Ti–N properties. The SiCl4 addition obviously enhanced growth rate, changed crystal structure, incorporated Si into coatings, increased the hardness, and severely decreased the grain size to a nano-scale.