• Title of article

    Enhancement of cluster yield under gold dimer oblique bombardment of the silicon surface

  • Author/Authors

    M. Medvedeva، نويسنده , , I. Wojciechowski، نويسنده , , B.J. Garrison، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    148
  • To page
    151
  • Abstract
    Recent experiments of silicon bombardment show that kilo electron volt heavy polyatomic projectiles can increase the non-linear enhancement of the total yield of secondary silicon ions as well as the cluster ones. To understand why the heavy polyatomic projectiles increase the yields, molecular dynamics simulations of the bombardment of a Si(100)-(2×1) surface by Aln and Aun, n=1, 2 with an initial energy of 1.5 keV/atom at the incident angle of 45° are carried out. The microscopic analysis shows that upon penetrating into the substrate the Au2 constituents disintegrate slowly and the collision cascades overlap with a large probability. The process of sharing and depositing energy near the surface is very effective in the Au2 case under these bombardment parameters. Thus the probability of high yield events for enhancement of cluster yield is increased.
  • Keywords
    SIMS , Sputtering , Energy dissipation , Silicon
  • Journal title
    Applied Surface Science
  • Serial Year
    2003
  • Journal title
    Applied Surface Science
  • Record number

    998409