• Title of article

    Role of island corner rounding in the morphology transition of the submonolayers grown on metal (1 1 0) surfaces

  • Author/Authors

    Z.-J. Liu، نويسنده , , Y.G. Shen، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    7
  • From page
    197
  • To page
    203
  • Abstract
    The role of island corner rounding in the temperature-dependent transition of one-dimensional (1D) monoatomic chain to two-dimensional (2D) island of the epitaixal submonolayers grown on metal (1 1 0) surfaces is studied. We show by Kinetic Monte Carlo simulations and a rate-equation analysis that for aggregation without detachment the anisotropy in corner rounding does play a decisive role in this morphology evolution, agreeing with a previous study where the one-way corner rounding controls the formation of 1D chain at intermediate temperatures and the two-way corner rounding is responsible for its transition to 2D island at high temperatures. However, for fully reversible aggregation, our simulation results reveal that the one-way corner rounding plays a minor role in the formation of 1D chain, even its activation energy can be significantly reduced. Instead, the capture of in-channel-diffusing adatoms by other adatoms or islands leading to the formation of in-channel bonds is responsible for the formation of 1D chain. With its hopping barrier normally less than that of the two-way corner rounding in metal (1 1 0) systems, the in-channel detachment by breaking one in-channel bond governs the transition of 1D chain to 2D island. Our simulation also shows that without the cross-channel atomic interaction the 2D island cannot be formed for fully reversible aggregation. # 2004 Elsevier B.V. All rights reserved.
  • Keywords
    growth mechanism , Monte Carlo simulation , Thin film , Submonolayers
  • Journal title
    Applied Surface Science
  • Serial Year
    2004
  • Journal title
    Applied Surface Science
  • Record number

    998660