Title of article
Mobility enhancement in surface channel SiGe PMOSFETs with HfO/sub 2/ gate dielectrics
Author/Authors
K.، Onishi, نويسنده , , J.C.، Lee, نويسنده , , S.K.، Banerjee, نويسنده , , Shi، Zhonghai نويسنده , , D.، Onsongo, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-33
From page
34
To page
0
Abstract
We report for the first time drive current enhancement and higher mobilities than the universal mobility for SiO/sub 2/ on Si in compressively strained Si/sub 1-x/Ge/sub x/-on-Si surface channel PMOSFETs with HfO/sub 2/ gate dielectrics, for gate lengths (L/sub G/) down to 180 nm. Thirty six percent drive current enhancement was achieved for Si/sub 0.8/Ge/sub 0.2/ channel PMOSFETs compared to Si PMOSFETs with HfO/sub 2/ gate dielectric. We demonstrate that using Si/sub 1-x/Ge/sub x/ in the channel may be one way to recover the mobility degradation due to the use of HfO/sub 2/ on Si.
Keywords
Analytical and numerical techniques , heat transfer , natural convection
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99881
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