Title of article
GaN MOS device using SiO/sub 2/-Ga/sub 2/O/sub 3/ insulator grown by photoelectrochemical oxidation method
Author/Authors
Lee، Ching-Ting نويسنده , , Lee، Hsin-Ying نويسنده , , Chen، Hong-Wei نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-53
From page
54
To page
0
Abstract
We report on a SiO/sub 2/-Ga/sub 2/O/sub 3/ gate insulator stack directly grown on n-type GaN by the photoelectrochemical oxidation method. The resultant MOS devices are fabricated using standard photolithography and liftoff techniques. The effect of annealing temperature on the SiO/sub 2/Ga/sub 2/O/sub 3//n-type GaN MOS devices is investigated. The properties of high breakdown field, low gate leakage current, and low interface state density are investigated for the MOS devices.
Keywords
heat transfer , natural convection , Analytical and numerical techniques
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99885
Link To Document