Influence of N2:(N2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

Preferred crystal orientation and low electrical resistivity are required for ZrNx films applied in electronic devices. In this paper, effects of N2:(N2+Ar) flow ratio (F(N2)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N2) (4–24%), the films show fcc NaCl structure. While for F(N2) in the ranges of 5–12, 12–24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N2) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature.