Growth studies and characterisation of In2S3 thin films deposited by atomic layer deposition (ALD)

An increased attention is devoted to interfacial In2S3 thin films because of their potential application as a new generation of buffer layer in copper indium gallium diselenide (CIGS)-based solar cells. In this paper, thin films of In2S3 were deposited on soda lime glass and SnO2-coated glass using indium acetylacetonate (In(acac)3) and H2S precursors by atomic layer deposition (ALD), a sequential chemical vapour deposition technique allowing the formation of dense and homogeneous films. The effect of temperature on the film kinetics has been studied. In a temperature window between 130 and 260 8C, a maximum growth rate of about 0.7 A ° per cycle is obtained at 180 8C. The structure and morphology of films were characterised by XRD, SEM and TEM. The ALD-In2S3 thin films are crystallised in a tetragonal form with band gap values of about 2.7 eV. Electrical properties have been addressed by using impedance measurements on semiconductor electrolyte junctions. The films are n-type semiconductors with a doping level around 1016–1017 cm 3 and possess a good blocking behaviour under reverse bias. The flat band potential is about 1.1 V versus MSE. These figures are close to those measured under similar conditions with CdS buffer layers and could explain the good cell performances obtained with ALD-In2S3. # 2003 Published by Elsevier B.V.