Title of article
Formation of ytterbium silicide nanowires on Si(0 0 1)
Author/Authors
M. Kuzmin*، نويسنده , , P. Laukkanen، نويسنده , , R.E. Pera¨la¨، نويسنده , , R.-L. Vaara، نويسنده , , I.J. Va¨yrynen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
394
To page
398
Abstract
We demonstrate ability to form self-assembled nanowires of Yb silicide on Si(0 0 1) by means of solid phase epitaxy. Such
nanowires, in contrast to those of other rare earth silicides, are shown to exhibit an unexpectedly wide variety of orientations with
respect to the Si substrate. Their spontaneous formation is explained in terms of the hexagonal AlB2 structure of silicon-rich Yb
disilicide.
# 2003 Elsevier B.V. All rights reserved.
Keywords
and topography , Scanning tunnelingmicroscopy , Ytterbium , Silicon , Silicides , Self-assembly , morphology , Surface structure , Roughness
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999084
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