Balancing reactor fluid dynamics and deposition kinetics to achieve compositional variation in combinatorial chemical vapor depositions

A low-pressure chemical vapor deposition (CVD) reactor was modified to produce compositional spreads of TiO2/HfO2/SnO2 and ZrO2/HfO2/SnO2 on a single Si(1 0 0) wafer. Use of anhydrous metal nitrates as single-source precursors allowed the deposition kinetics to be matched. The compositions were mapped using X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. On a single wafer, an array of capacitors each with a dimension of 100 mm 100 mm was used to map the effective dielectric constant of the films. The dielectric constant reached a maximum in the regions with the high TiO2 or ZrO2 content. A unique crystalline phase having the orthorhombic a-PbO2 structure was detected in the films grown at or above 450 8C. # 2003 Elsevier B.V. All rights reserved.