In situ B doping of SiGe(C) using BCl3 in ultraclean hot-wall LPCVD

In situ B doping of SiGe(C) epitaxial growth on Si using BCl3 in ultraclean hot-wall LPCVD has been investigated at low temperatures around 500 8C. Alhough BCl3 was used as doping gas, incorporation of Cl in the epitaxial film was under SIMS detection limit and no deterioration of the crystallinity was recognized by high-resolution XRD. The sheet resistance in-wafer uniformity in 200 mm diameter wafer of B-doped SiGe(C) using BCl3 was around 2s%, which is much better than the case of B2H6 dopant gas (12s%). The deposition rate was scarcely changed with BCl3 addition at the lower GeH4 and BCl3 partial pressures range corresponding SiGe(C)–HBT process condition. All the results assured that BCl3 is promising as B doping gas for low temperature SiGe(C) epitaxial growth. # 2003 Elsevier B.V. All rights reserved.