Influence of Si1 xGex interlayer on the initial growth of SiGeC on Si(1 0 0)

The initial growth of Si1 x yGexCy film with Si1 xGex interlayer on Si(1 0 0) surface is investigated by scanning tunneling microscopy and reflection high energy electron diffraction. The increase in the Ge fraction of Si1 xGex interlayers raises the critical thickness of the transition from two-dimensional (2D) to three-dimensional (3D) growth of Si1 x yGexCy layers, and is effective to suppress the surface-roughening of Si1 x yGexCy layers. The atomic-scale valley structure separating 2D-islands of the Si1 x yGexCy layers are observed on the surface, which is deduced to be the structure for the compressive-strain relaxation of Si1 x yGexCy layers on the Si substrate as well as missing dimmer rows. # 2003 Elsevier B.V. All rights reserved