Adsorption kinetics of dimethylsilane at Si(0 0 1)

Adsorption kinetics of dimethylsilane (DMS) at Si(0 0 1) surface has been investigated by using temperature-programmed desorption (TPD). The saturated hydrogen coverage of two monolayer was identical with that from monomethylsilane (MMS)- saturated surface. By being combined with the C/H ratios within a molecule (1/6 for MMS and 1/4 for DMS), this fact suggests enhanced C incorporation by DMS as compared with MMS by a factor of 1.5. The TPD spectra are deconvoluted into b1 ( 510 8C), b10 ( 550 8C), g ( 615 8C) and d ( 910 8C) peaks. The appearance of the bulk C-related g peak from the very initial adsorption, in contrast to MMS, is consistent with the enhanced C incorporation. Although the hydrogen uptake (H-uptake) curve is quantitatively fitted with the four-site adsorption model, discussions on the sub-peak assignments suggest presence of further decompositions of ad-species at initial adsorptions. # 2003 Elsevier B.V. All rights reserved