Title of article
Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing
Author/Authors
Isao Tsunoda*، نويسنده , , Atsushi Kenjo، نويسنده , , Taizoh Sadoh، نويسنده , , Masanobu Miyao، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
231
To page
234
Abstract
Ion beam stimulated solid phase crystallization of a-Si1 xGex (0 x 1) on SiO2 has been investigated. The critical
temperature to cause crystal nucleation can be successfully decreased by 150 8C for a-Si1 xGex with all Ge fractions (0–100%)
by using ion stimulation. As a result, crystal growth below the softening temperature ( 500 8C) of glass substrates was achieved
for samples with Ge fractions exceeding 50%. This method combined with Ge doping and ion stimulation will be a powerful tool
to fabricate poly-SiGe TFTs on low cost glass substrates.
# 2003 Elsevier B.V. All rights reserved
Keywords
Nucleation , Solid-phase-crystallization , Ion-beam stimulation , SiO2 , sIgE
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999195
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