Title of article
A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O/sub 3/ gate stack
Author/Authors
D.، Wu, نويسنده , , J.، Olsson, نويسنده , , M.، von Haartman, نويسنده , , M.، Ostling, نويسنده , , A.-C.، Lindgren, نويسنده , , S.، Persson, نويسنده , , G.، Sjoblom, نويسنده , , J.، Seger, نويسنده , , P.-E.، Hellstrom, نويسنده , , H.-O.، Blom, نويسنده , , S.-L.، Zhang, نويسنده , , E.، Vainonen-Ahlgren, نويسنده , , W.-M.، Li, نويسنده , , E.، Tois, نويسنده , , M.، Tuominen, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-170
From page
171
To page
0
Abstract
Proof-of-concept pMOSFETs with a strained-Si/sub 0.7/Ge/sub 0.3/ surface-channel deposited by selective epitaxy and a TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O/sub 3/ gate stack grown by atomic layer chemical vapor deposition (ALD) techniques were fabricated. The Si/sub 0.7/Ge/sub 0.3/ pMOSFETs exhibited more than 30% higher current drive and peak transconductance than reference Si pMOSFETs with the same gate stack. The effective mobility for the Si reference coincided with the universal hole mobility curve for Si. The presence of a relatively low density of interface states, determined as 3.3 * 10/sup 11/ cm/sup -2/ eV/sup -1/, yielded a subthreshold slope of 75 mV/dec. for the Si reference. For the Si/sub 0.7/Ge/sub 0.3/ pMOSFETs, these values were 1.6 * 10/sup 12/ cm/sup – 2/ eV/sup -1/ and 110 mV/dec., respectively.
Keywords
Analytical and numerical techniques , heat transfer , natural convection
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99921
Link To Document