The state-of-the-art in simulation for optimization of SiGe-HBTs

We present the state-of-the-art in simulation for industrial application of heterostructure devices based on the SiGe/Si material system. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic analyses of SiGe-heterojunction bipolar transistors (HBTs) with MINIMOS-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation. # 2003 Elsevier B.V. All rights reserved.