Title of article
Rigorous modeling approach to numerical simulation of SiGe HBTs
Author/Authors
V. Palankovski*، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
361
To page
364
Abstract
We present results of fully two-dimensional numerical simulations of silicon–germanium (SiGe) heterojunction bipolar
transistors (HBTs) in comparison with experimental data. Among the critical modeling issues discussed in the paper, special
attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown in Si.
# 2003 Elsevier B.V. All rights reserved
Keywords
Mobility , SiGe , HBT , Numerical simulation , Bandgap , modeling
Journal title
Applied Surface Science
Serial Year
2004
Journal title
Applied Surface Science
Record number
999219
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