Title of article
What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?
Author/Authors
G.، Dambrine, نويسنده , , F.، Danneville, نويسنده , , C.، Raynaud, نويسنده , , M.، Dehan, نويسنده , , D.، Lederer, نويسنده , , O.، Rozeaux, نويسنده , , M.، Vanmackelberg, نويسنده , , S.، Lepilliet, نويسنده , , J.-P.، Raskin, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-188
From page
189
To page
0
Abstract
Parameters limiting the improvement of high frequency characteristics for deep submicron MOSFETs with the downscaling process of the channel gate length are analyzed experimentally and analytically. It is demonstrated that for MOSFETs with optimized source, drain and gate access, the degradation of the maximum oscillation frequency is mainly related to the increase of the parasitic feedback gate-to-drain capacitance and output conductance with the physical channel length reduction. Optimization of these internal parameters is needed to further improve the high frequency performance of ultra deep submicron MOSFETs.
Keywords
Analytical and numerical techniques , natural convection , heat transfer
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99927
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