Title of article
Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode
Author/Authors
D.L.، Kwong, نويسنده , , C.H.، Choi, نويسنده , , R.، Clark, نويسنده , , T.S.، Jeon, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-214
From page
215
To page
0
Abstract
High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride (HfOxNy) gate dielectric with polysilicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950 (degree)C N/sub 2/ annealing. Compared with HfO/sub 2/ films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakagecurrent density and boron penetration and superior thermal and electrical stability.
Keywords
heat transfer , natural convection , Analytical and numerical techniques
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99933
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