Title of article
Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz
Author/Authors
M.، Feng, نويسنده , , W.، Hafez, نويسنده , , Lai، Jie-Wei نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-291
From page
292
To page
0
Abstract
Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve recordbreaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 *16 (mu)m have demonstrated a maximum current gain cutoff frequency f/sub T/ of 377 GHz with a simultaneous maximum power gain cutoff frequency f/sub MAX/ of 230 GHz at the current density Jc of 650 kA/cm/sup 2/. Typical BV/sub CEO/ values exceed 3.7 V.
Keywords
natural convection , Analytical and numerical techniques , heat transfer
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99956
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