Secondary ion emission and work function measurements over the transient region from n and p type Si under Csþ irradiation

Siþ and Si emissions from n and p type Si wafers (uniformly doped) during the initial stages of sputtering with Csþ ions (transient region) scale with work functions in an expontential fashion consistent with the electron tunneling model. Work functions were derived using the Kelvin probe method. The intensity–work function dependence is also shifted according to the initial work functions of these wafers. As a result, almost identical transient effects are exhibited, i.e. matrix ion intensities do not appear to scale with dopant concentrations. This implies that intensity–work function relations are substrate dependent. Csþ intensities were also studied. # 2004 Elsevier B.V. All rights reserved