Title of article
A high current gain 4H-SiC NPN power bipolar junction transistor
Author/Authors
Zhang، Jianhui نويسنده , , J.H.، Feng Yan Zhao, نويسنده , , P.، Alexandrov, نويسنده , , L.، Fursin, نويسنده , , Y، Luo, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
-326
From page
327
To page
0
Abstract
This work reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150(degree)C. The transistor blocks larger than 480 V and conducts 2.1 A (J/sub c/=239 A/cm/sup 2/) at V/sub ce/=3.4 V, corresponding to a specific on-resistance (R/sub sp on/) of 14 m(omega)cm/sup 2/, based on a drift layer design of 12 (mu)m doped to 6*10/sup 15/cm/sup -3/. Current gain (beta)>35 has been achieved for collector current densities ranging from J/sub c/=40 A/cm/sup 2/ to 239 A/cm/sup 2/ (I/sub c/=2.1 A) with a peak current gain of 38 at J/sub c/=114 A/cm/sup 2/.
Keywords
natural convection , Analytical and numerical techniques , heat transfer
Journal title
IEEE Electron Device Letters
Serial Year
2003
Journal title
IEEE Electron Device Letters
Record number
99968
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